Resistive random access memories and method for fabricating the same
US11653583B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 7, 2020 |
| Grant date | May 16, 2023 |
| Priority date | — |
| Expiry date | Aug 13, 2040 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C13/0007
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A resistive random access memory is provided. The resistive random access memory includes a bottom electrode, a metal oxide layer including a plurality of conductive filament regions formed on the bottom electrode, and a plurality of top electrodes formed on the metal oxide layer, corresponding to the respective conductive filament regions. Each of the conductive filament regions has a bottom portion and a top portion. The width of the bottom portion is greater than that of the top portion. The conductive filament regions include oxygen vacancies, and regions other than the conductive filament regions in the metal oxide layer are nitrogen-containing regions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.