Transistor characterization
US11656267B2 · kind B2 · utility
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2References
10Claims
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Key dates
| Filing date | Mar 30, 2021 |
| Grant date | May 23, 2023 |
| Priority date | — |
| Expiry date | Mar 30, 2041 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01R31/2648
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method of characterizing a field-effect transistor, including: a step of application, to the transistor gate, of a single voltage ramp; and a step of interpretation both of gate capacitance variations and of drain current variations of the transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.