Controlling semiconductor film thickness
US11656550B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 17, 2020 |
| Grant date | May 23, 2023 |
| Priority date | — |
| Expiry date | Jun 25, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31133
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
In certain embodiments, a method for processing a semiconductor substrate includes depositing a resin film on a substrate that has microfabricated structures defining recesses. The resin film fills the recesses and covers the microfabricated structures. The method includes performing, using a photoacid generator (PAG)-based process, a localized removal of the resin film to remove the resin film to respective first depths in the recesses, at least two depths of the respective first depths being different depths. The method includes repeatedly performing, using a thermal acid generator (TAG)-based process and until a predetermined condition is met, a uniform removal of a remaining portion of the resin film to remove a substantially uniform depth of the resin film in the recesses.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.