Semiconductor devices and methods of manufacturing semiconductor devices
US11658126B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 17, 2020 |
| Grant date | May 23, 2023 |
| Priority date | — |
| Expiry date | Mar 17, 2040 |
Classification
- Technology area (CPC —)General
Abstract
In one example, a semiconductor device, comprises a first redistribution layer (RDL) substrate comprising a first dielectric structure and a first conductive structure through the first dielectric structure and comprising one or more first conductive redistribution layers, an electronic component over the first RDL substrate, wherein the electronic component is coupled with the first conductive structure, a body over a top side of the first RDL substrate, wherein the electronic component is in the body, a second RDL substrate comprising a second dielectric structure over the body, and a second conductive structure through the second dielectric structure and comprising one or more second conductive redistribution layers, and an internal interconnect coupled between the first conductive structure and the second conductive structure. Other examples and related methods are also disclosed herein.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.