Semiconductor device having a plurality of bipolar transistors with different heights between their respective emitter layers and emitter electrodes
US11658180B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 1, 2021 |
| Grant date | May 23, 2023 |
| Priority date | — |
| Expiry date | Jul 27, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/613
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device has a semiconductor substrate, and multiple first bipolar transistors on the first primary surface side of the semiconductor substrate. The first bipolar transistors have a first height between an emitter layer and an emitter electrode in the direction perpendicular to the first primary surface. The semiconductor device further has at least one second bipolar transistor on the first primary surface side of the semiconductor substrate. The second bipolar transistor have a second height, greater than the first height, between an emitter layer and an emitter electrode in the direction perpendicular to the first primary surface. Also, the semiconductor has a first bump stretching over the multiple first bipolar transistors and the at least one second bipolar transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.