Vertical trench gate MOSFET with integrated Schottky diode

US11658241B2 · kind B2 · utility

Assignee

• TEXAS INSTRUMENTS INCORPORATED · US

Inventors

• Sunglyong Kim · Allen, US
• Seetharaman Sridhar · Richardson, US
• Hong-Seon Yang · Yongsan-gu, KR
• Ya-Ping Chen · Chengdu, CN
• Thomas E. Grebs · Smethport, US

Key dates

• Filing date: Dec 31, 2018
• Grant date: May 23, 2023
• Expiry date: Dec 31, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/518

Abstract

An integrated circuit includes a trench gate MOSFET including MOSFET cells. Each MOSFET cell includes an active trench gate in an n-epitaxial layer oriented in a first direction with a polysilicon gate over a lower polysilicon portion. P-type body regions are between trench gates and are separated by an n-epitaxial region. N-type source regions are located over the p-type regions. A gate dielectric layer is between the polysilicon gates and the body regions. A metal-containing layer contacts the n-epitaxial region to provide an anode of an embedded Schottky diode. A dielectric layer over the n-epitaxial layer has metal contacts therethrough connecting to the n-type source regions, to the p-type body regions, and to the anode of the Schottky diode.