Inventor · Smethport, PA, US

Thomas E. Grebs

52Patents
15h-index
44Co-inventors
84Inventor score

Filing activity: Jun 30, 1997 → Aug 21, 2019

Most-cited inventions

PatentTitleAreaCited byStatus
US6399022B1 Simplified ozonator for a semiconductor wafer cleaner Emerging Cross-Sectional Technologies 328 Expired
US6433385B1 MOS-gated power device having segmented trench and extended doping zone and process for forming same Electricity 96 Expired
US7449354B2 Trench-gated FET for power device with active gate trenches and gate runner trench utilizing one-mask etch Emerging Cross-Sectional Technologies 80 Active
US7504303B2 Trench-gate field effect transistors and methods of forming the same Electricity 61 Active
US6818947B2 Buried gate-field termination structure Electricity 53 Expired
US6673681B2 Process for forming MOS-gated power device having segmented trench and extended doping zone Electricity 46 Expired
US7476589B2 Methods for forming shielded gate field effect transistors Electricity 45 Active
US7352036B2 Semiconductor power device having a top-side drain using a sinker trench Electricity 35 Expired
US6238981A Process for forming MOS-gated devices having self-aligned trenches Electricity 32 Expired
US7416948B2 Trench FET with improved body to gate alignment Electricity 24 Active
US6573569B2 Trench MOSFET with low gate charge Electricity 23 Expired
US6680232B2 Trench etch with incremental oxygen flow Emerging Cross-Sectional Technologies 22 Expired
US8803207B2 Shielded gate field effect transistors Electricity 20 Active
US6602768B2 MOS-gated power device with doped polysilicon body and process for forming same Emerging Cross-Sectional Technologies 17 Expired
US7923776B2 Trench-gate field effect transistor with channel enhancement region and methods of forming the same Electricity 17 Active
US8026558B2 Semiconductor power device having a top-side drain using a sinker trench Electricity 15 Active
US8043913B2 Method of forming trench-gate field effect transistors Electricity 13 Active
US8143123B2 Methods of forming inter-poly dielectric (IPD) layers in power semiconductor devices Emerging Cross-Sectional Technologies 12 Active
US8148749B2 Trench-shielded semiconductor device Electricity 12 Active
US6314974A Potted transducer array with matching network in a multiple pass configuration Emerging Cross-Sectional Technologies 7 Expired
US9318598B2 Trench MOSFET having reduced gate charge Electricity 7 Active
US7935577B2 Method for forming shielded gate field effect transistor using spacers Electricity 7 Active
US6077744A Semiconductor trench MOS devices Electricity 7 Expired
US6214673A Process for forming vertical semiconductor device having increased source contact area Electricity 6 Expired
US6365942B1 MOS-gated power device with doped polysilicon body and process for forming same Emerging Cross-Sectional Technologies 5 Expired

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.