Patent · US Active

Method of manufacturing an optoelectronic device comprising a plurality of diodes

US11658260B2 · kind B2 · utility

1Cited by

0References

16Claims

0Family size

Assignee

COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventors

Perrine Batude · Dijon, FR
Hubert Bono · Grenoble, FR

Key dates

Filing date	May 21, 2021
Grant date	May 23, 2023
Priority date	—
Expiry date	May 21, 2041

Classification

Technology area (CPC H)Electricity
CPC primaryH10H29/142
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

An optoelectronic device manufacturing method including the steps of: a) forming an active diode stack including first and second of opposite conductivity types; b) forming an integrated control circuit including a plurality of elementary control cells each including at least one MOS transistor; c) after steps a) and b), transferring the integrated control circuit onto the upper surface of the active diode stack; and d) after step c), forming trenches extending vertically through the integrated control circuit and emerging into or onto the first layer and delimiting a plurality of pixels each including a diode and an elementary control cell.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.