Low leakage MOSFET supply clamp for electrostatic discharge (ESD) protection
US11658479B2 · kind B2 · utility
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13References
25Claims
0Family size
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Key dates
| Filing date | Sep 9, 2020 |
| Grant date | May 23, 2023 |
| Priority date | — |
| Expiry date | May 29, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D89/819
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Electrostatic discharge (ESD) protection is provided in using a supply clamp circuit using an ESD event actuated MOSFET device. Triggering of the MOSFET device is made at both the gate terminal and the substrate (back gate) terminal. Additionally, the MOSFET device can be formed of cascoded MOSFETs.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.