High quality group-III metal nitride seed crystal and method of making
US11661670B2 · kind B2 · utility
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22Claims
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Key dates
| Filing date | Dec 23, 2020 |
| Grant date | May 30, 2023 |
| Priority date | — |
| Expiry date | Jul 27, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/01335
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
High quality ammonothermal group III metal nitride crystals having a pattern of locally-approximately-linear arrays of threading dislocations, methods of manufacturing high quality ammonothermal group III metal nitride crystals, and methods of using such crystals are disclosed. The crystals are useful for seed bulk crystal growth and as substrates for light emitting diodes, laser diodes, transistors, photodetectors, solar cells, and for photoelectrochemical water splitting for hydrogen generation devices.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.