Patent · US Active

Mask and method of forming the same

US11662656B2 · kind B2 · utility

1Cited by
18References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateNov 23, 2020
Grant dateMay 30, 2023
Priority date
Expiry dateJul 30, 2041

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L21/0337
  • WIPO fieldOptics
  • WIPO sectorInstruments

Abstract

A mask includes a substrate, a reflective multilayer, an absorption layer and an absorption part. The substrate includes a mask image region and a mask frame region, wherein the mask frame region has a mask black border region adjacent to the mask image region. The reflective multilayer is disposed over the substrate. The absorption layer is disposed over the reflective multilayer. The absorption part is disposed in the reflective multilayer and the absorption layer and in the mask black border region, wherein an entire top surface of the absorption part is substantially flush with a top surface of the absorption layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.