DC plasma control for electron enhanced material processing
US11664195B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 11, 2021 |
| Grant date | May 30, 2023 |
| Priority date | — |
| Expiry date | Nov 11, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05H2242/22
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Systems and methods for material processing using wafer scale waves of precisely controlled electrons in a DC plasma is presented. The anode and cathode of a DC plasma chamber are respectively connected to an adjustable DC voltage source and a DC current source. The anode potential is adjusted to shift a surface floating potential of a stage in a positive column of the DC plasma to a reference ground potential of the DC voltage/current sources. A control loop can be activated throughout various processing steps to maintain the surface floating potential of the stage to the reference ground potential. A signal generator referenced to the ground potential is capacitively coupled to the stage to control a surface potential at the stage for provision of kinetic energy to free electrons in the DC plasma.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.