David Irwin Margolese
14Patents
6h-index
14Co-inventors
63Inventor score
Filing activity: Dec 11, 2000 → May 23, 2024
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6592764B1 | Block copolymer processing for mesostructured inorganic oxide materials | Emerging Cross-Sectional Technologies | 131 | Expired |
| US7176245B2 | Block copolymer processing for mesostructured inorganic oxide materials | Emerging Cross-Sectional Technologies | 51 | Expired |
| US11715623B2 | DC plasma control for electron enhanced material processing | Electricity | 6 | Active |
| US11676797B2 | DC plasma control for electron enhanced material processing | Electricity | 6 | Active |
| US11664195B1 | DC plasma control for electron enhanced material processing | Electricity | 6 | Active |
| US11688588B1 | Electron bias control signals for electron enhanced material processing | Electricity | 6 | Active |
| US11887823B2 | Electron bias control signals for electron enhanced material processing | Electricity | 3 | Active |
| US11869747B1 | Atomic layer etching by electron wavefront | Electricity | 3 | Active |
| US12027348B2 | Electron bias control signals for electron enhanced material processing | Electricity | 2 | Active |
| US11942306B1 | Atomic layer etching by electron wavefront | Electricity | 2 | Active |
| US7763665B2 | Block polymer processing for mesostructured inorganic oxide materials | Emerging Cross-Sectional Technologies | 1 | Active |
| US11810757B1 | Atomic layer etching by electron wavefront | General | 0 | Revoked |
| US12119205B2 | Atomic layer etching by electron wavefront | Electricity | 0 | Active |
| US12125686B2 | Electron bias control signals for electron enhanced material processing | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.