Atomic layer deposition of indium gallium zinc oxide
US11664222B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 16, 2020 |
| Grant date | May 30, 2023 |
| Priority date | — |
| Expiry date | Jan 13, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02639
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods of forming indium gallium zinc oxide (IGZO) films by vapor deposition are provided. The IGZO films may, for example, serve as a channel layer in a transistor device. In some embodiments atomic layer deposition processes for depositing IGZO films comprise an IGZO deposition cycle comprising alternately and sequentially contacting a substrate in a reaction space with a vapor phase indium precursor, a vapor phase gallium precursor, a vapor phase zinc precursor and an oxygen reactant. In some embodiments the ALD deposition cycle additionally comprises contacting the substrate with an additional reactant comprising one or more of NH3, N2O, NO2 and H2O2.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.