Method for thermally processing a substrate and associated system
US11664246B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Dec 3, 2019 |
| Grant date | May 30, 2023 |
| Priority date | — |
| Expiry date | Dec 3, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/2258
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for thermally processing a substrate having a surface region and a buried region with a pulsed light beam, the substrate presenting an initial temperature-depth profile and the surface region presenting an initial surface temperature, including steps of: illuminating the surface region with a preliminary pulse so that it generates an amount of heat and reaches a predetermined preliminary surface temperature; and illuminating the surface region with a subsequent pulse after a time interval so that it reaches a predetermined subsequent surface temperature. The time interval is determined such that the surface region reaches a predetermined intermediate surface temperature greater than the initial surface temperature, such that during the time interval, the amount of heat is diffused within the substrate down to a predetermined depth so that the substrate presents a predetermined intermediate temperature-depth profile.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.