One-time programmable memory cell and fabrication method thereof
US11665891B2 · kind B2 · utility
0Cited by
5References
14Claims
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Key dates
| Filing date | May 7, 2021 |
| Grant date | May 30, 2023 |
| Priority date | — |
| Expiry date | Nov 3, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B20/25
Abstract
A one-time programmable (OTP) memory cell includes a substrate comprising an active area surrounded by an isolation region, a transistor disposed on the active area, and a diffusion-contact fuse electrically coupled to the transistor. The diffusion-contact fuse includes a diffusion region in the active area, a silicide layer on the diffusion region, and a contact partially landed on the silicide layer and partially landed on the isolation region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.