Three-dimensional memory device having adjoined source contact structures and methods for forming the same

US11665901B2 · kind B2 · utility

Assignee

• YANGTZE MEMORY TECHNOLOGIES CO., LTD. · CN

Inventors

• Lu Zhang · Shanghai, CN
• Zhipeng Wu · 红钢城街道, CN
• Bo Xu · Beijing, CN
• Kai Han · Zhubeikou, TW
• Chuan Yang · Chongqing, CN
• Zi Yin · 安丰镇, CN
• Liuqun Xie · 红钢城街道, CN

Key dates

• Filing date: Apr 29, 2020
• Grant date: May 30, 2023
• Expiry date: Jul 30, 2040

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10B43/35

Abstract

Embodiments of structure and methods for forming a memory device are provided. In an example, a memory device includes a substrate, a stack above the substrate, a channel structure, and a source contact structure each extending vertically through the memory stack. The source contact structure includes (i) a plurality of first source contact portions each extending vertically and laterally separated from one another and (ii) a second source contact portion extending vertically over and in contact with the plurality of first source contact portions, the second source contact portion being laterally continuous.