Methods and apparatus for depositing aluminum by physical vapor deposition (PVD)
US11670485B2 · kind B2 · utility
1Cited by
8References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 20, 2019 |
| Grant date | Jun 6, 2023 |
| Priority date | — |
| Expiry date | Nov 23, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/332
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Methods and apparatus for performing physical vapor deposition in a reactor chamber to form aluminum material on a substrate including: depositing a first aluminum layer atop a substrate to form a first aluminum region having a first grain size and a second aluminum layer atop the first aluminum layer, wherein the second aluminum layer has a second grain size larger than the first grain size; and depositing aluminum atop the second aluminum layer under conditions sufficient to increase the second grain size.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.