Semiconductor device structure with resistive elements
US11670501B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 31, 2021 |
| Grant date | Jun 6, 2023 |
| Priority date | — |
| Expiry date | May 11, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/47
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device structure is provided. The semiconductor device structure includes a semiconductor substrate, a first resistive element and a second resistive element over the semiconductor substrate. A topmost surface of the second resistive element is higher than a topmost surface of the first resistive element. The semiconductor device structure also includes a first conductive feature and a second conductive feature electrically connected to the first resistive element. The second resistive element is between and electrically isolated from the first conductive feature and the second conductive feature. The semiconductor device structure further includes a first dielectric layer surrounding the first conductive feature and the second conductive feature.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.