Semiconductor structure with ultra thick metal and manufacturing method thereof
US11670584B2 · kind B2 · utility
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2References
20Claims
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Assignee
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Key dates
| Filing date | Aug 3, 2021 |
| Grant date | Jun 6, 2023 |
| Priority date | — |
| Expiry date | Oct 28, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2224/11
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present disclosure provides a method for manufacturing a semiconductor structure, including patterning a photo-sensitive polymer layer with a plurality of trenches by a first mask, the first mask having a first line pitch, patterning a photoresist positioning on a mesa between adjacent trenches by a second mask, the second mask having a second line pitch, the first mask and the second mask having substantially identical pattern topography, and the second line pitch being greater than the first line pitch, and selectively plating conductive material in the plurality of trenches.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.