Semiconductor transistor device and method of manufacturing the same

US11670684B2 · kind B2 · utility

Assignee

• Infineon Technologies Austria AG · AT

Inventors

• Li Juin Yip · Villach, AT
• Oliver Blank · Villach, AT
• Heimo Hofer · Bodensdorf, AT
• Michael Hutzler · Villach, AT
• Ralf Siemieniec · Villach, AT

Key dates

• Filing date: Feb 1, 2021
• Grant date: Jun 6, 2023
• Expiry date: Apr 9, 2041

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/127

Abstract

The application relates to a semiconductor transistor device, having a source region, a body region including a channel region extending in a vertical direction, a drain region, a gate region arranged aside the channel region in a lateral direction, and a body contact region made of an electrically conductive material, wherein the body contact region forms a body contact area, the body contact region being in an electrical contact with the body region via the body contact area, and wherein the body contact area is tilted with respect to the vertical direction and the lateral direction.