Doping activation and ohmic contact formation in a SiC electronic device, and SiC electronic device
US11670685B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 8, 2021 |
| Grant date | Jun 6, 2023 |
| Priority date | — |
| Expiry date | Apr 8, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/882
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing a SiC-based electronic device, that includes implanting, at a front side of a solid body of SiC having a conductivity of N type, dopant species of P type, thus forming an implanted region that extends in depth in the solid body starting from the front side and has a top surface co-planar with said front side; and generating a laser beam directed towards the implanted region in order to generate heating of the implanted region at temperatures comprised between 1500° C. and 2600° C. so as to form an ohmic contact region including one or more carbon-rich layers, for example graphene and/or graphite layers, in the implanted region and, simultaneously, activation of the dopant species of P type.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.