Semiconductor apparatus
US11670688B2 · kind B2 · utility
0Cited by
3References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 15, 2018 |
| Grant date | Jun 6, 2023 |
| Priority date | — |
| Expiry date | Nov 15, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/23
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The disclosure provides a semiconductor apparatus capable of keeping a semiconductor characteristics and realizing excellent semiconductor properties even when using an n type semiconductor (gallium oxide, for example) having a low loss at a high voltage and having much higher dielectric breakdown electric field strength than SiC. A semiconductor apparatus includes a gate electrode and a channel layer formed of a channel directly or through other layers on a side wall of the gate electrode, and wherein a portion of or whole the channel layer may be a p type oxide semiconductor (iridium oxide, for example).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.