Patent · US Active

Ferroelectric semiconductor device and method for producing a memory cell

US11672127B2 · kind B2 · utility

0Cited by

7References

13Claims

0Family size

Assignee

Fraunhofer-Gesellschaft zur förderung der angewandten Forschung e.V. · DE

Inventors

Bernhard Wagner · Fellbach, DE
Simon Fichtner · Itzehoe, DE
Fabian LOFINK · Itzehoe, DE

Key dates

Filing date	Jan 28, 2021
Grant date	Jun 6, 2023
Priority date	—
Expiry date	Jan 28, 2041

Classification

Technology area (CPC H)Electricity
CPC primaryH10D64/689
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

Ferroelectric semiconductor device with a memory cell, with a ferroelectric memory layer and a first conductive layer disposed on the ferroelectric memory layer; and a semiconductor device connected to the memory cell. The ferroelectric memory layer of the memory cell can include a mixed crystal with a group III nitride and a non-group III element.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.