Simon Fichtner
2Patents
0h-index
3Co-inventors
21Inventor score
Filing activity: Sep 10, 2020 → Jan 28, 2021
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US11744158B2 | Ferroelectric material, MEMS component comprising a ferroelectric material, MEMS device comprising a first MEMS component, method of producing a MEMS component, and method of producing a CMOS-compatible MEMS component | Performing Operations; Transporting | 0 | Active |
| US11672127B2 | Ferroelectric semiconductor device and method for producing a memory cell | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.