Extreme ultraviolet mask absorber materials
US11675263B2 · kind B2 · utility
0Cited by
9References
30Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 8, 2021 |
| Grant date | Jun 13, 2023 |
| Priority date | — |
| Expiry date | Aug 17, 2041 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/58
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise a substrate; a multilayer stack of reflective layers on the substrate; and an absorber layer comprising tantalum and iridium or ruthenium and antimony.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.