Chemical mechanical polishing apparatus for controlling polishing uniformity
US11676824B2 · kind B2 · utility
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16References
19Claims
0Family size
Assignee
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Key dates
| Filing date | Aug 14, 2019 |
| Grant date | Jun 13, 2023 |
| Priority date | — |
| Expiry date | Jan 14, 2042 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB24B57/00
- WIPO fieldMachine tools
- WIPO sectorMechanical engineering
Abstract
A chemical mechanical polishing (CMP) apparatus includes a polishing pad on a polishing platen, a polishing head on the polishing pad, the polishing head having a membrane to hold a wafer on the polishing pad, and a polishing slurry feeding line to feed a polishing slurry, and a retainer ring around the membrane and in contact with the polishing pad to prevent detachment of the wafer, the retainer ring including a polishing slurry feeding inlet connected to the polishing slurry feeding line to feed the polishing slurry onto the polishing pad.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.