Image sensor and method of making

US11676980B2 · kind B2 · utility

Assignee

• TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. · TW

Inventors

• Po-Han Chen · Hsinchu, TW
• Chen-Chun Chen · Hsinchu, TW
• Fu-Cheng Chang · Tainan, TW
• Kuo-Cheng Lee · Tainan, TW

Key dates

• Filing date: Oct 7, 2019
• Grant date: Jun 13, 2023
• Expiry date: Feb 16, 2040

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F39/807

Abstract

An image sensor includes a substrate and a first photodiode (PD) having a first size in the substrate. The image sensor further includes a second PD having a second size in the substrate, wherein the first size is different from the second size. The image sensor further includes a first buffer layer over the substrate. The image sensor further includes a shield layer over the first buffer, wherein the first buffer layer and the shield layer define a first recess aligned with the first PD and a second recess aligned with the second PD. The image sensor further includes a flicker reduction layer in the first recess, wherein the second recess is free of the flicker reduction layer.