Patent · US Active

Method and structure for dual sheet resistance trimmable thin film resistors

US11676993B2 · kind B2 · utility

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24Claims

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Assignee

TEXAS INSTRUMENTS INCORPORATED · US

Inventors

Christoph Dirnecker · Unterschleißheim, DE
Wolfgang Schwartz · Hamburg, DE
Doug Weiser · Plano, US
Joel M. Halbert · Tucson, US
Joseph Anthony DeSantis · Gilroy, US
Karsten Jens Spinger · Ingolstadt, DE

Key dates

Filing date	Sep 8, 2020
Grant date	Jun 13, 2023
Priority date	—
Expiry date	Sep 8, 2040

Classification

Technology area (CPC H)Electricity
CPC primaryH01L23/5228
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

In one example an electronic device includes a first resistor and a second resistor. The first resistor includes a first resistive layer located over a substrate, the first resistive layer having a first sheet resistance. The second resistor includes a first portion of a second resistive layer located over the substrate, the second resistive layer having a second sheet resistance different from the first sheet resistance. The first resistive layer is located between the substrate and a second noncontiguous portion of the second resistive layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.