Optoelectronic semiconductor body and light-emitting diode

US11677045B2 · kind B2 · utility

Assignee

• Osram OLED GMBH · DE

Inventors

• Werner Bergbauer · Windberg, DE
• Joachim Hertkorn · Neukirchen, DE
• Alexander Walter · Hemau, DE

Key dates

• Filing date: May 7, 2021
• Grant date: Jun 13, 2023
• Expiry date: Jul 28, 2041

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/825

Abstract

A light-emitting diode includes a semiconductor body and electrical connection points for contacting the semiconductor body, the semiconductor body including an active region including a quantum well that generates electromagnetic radiation, a first region and a second region that impede passage of charge carriers from the active region, wherein the semiconductor body is based on a nitride compound semiconductor material, the first region is directly adjacent to the active region on a p-side, the second region is arranged on a side of the first region facing away from the active region, the first region has an electronic band gap larger than the electronic band gap of the quantum well and less than or equal to an electronic band gap of the second region, the first region and the second region contain aluminum, and the active region emits electromagnetic radiation having a peak wavelength of less than 480 nm.