Hybrid power stage and gate driver circuit
US11677396B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 16, 2020 |
| Grant date | Jun 13, 2023 |
| Priority date | — |
| Expiry date | Dec 16, 2040 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02B70/10
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
Hybrid power switching stages and driver circuits are disclosed. An example semiconductor power switching device comprises a high-side switch and a low-side switch connected in a half-bridge configuration, wherein the high-side switch comprises a GaN power transistor and the low-side switch comprises a Si MOSFET. The Si—GaN hybrid switching stage provides enhanced performance, e.g. reduced switching losses, in a cost-effective solution which takes advantage of characteristics of power switching devices comprising both GaN power transistors and Si MOSFETs. Also disclosed is a gate driver for the Si—GaN hybrid switching stage, and a semiconductor power switching stage comprising the gate driver and a Si—GaN hybrid power switching device having a half-bridge or full-bridge switching topology.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.