Capacitor and DRAM device including the same
US11678476B2 · kind B2 · utility
0Cited by
5References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 5, 2021 |
| Grant date | Jun 13, 2023 |
| Priority date | — |
| Expiry date | Apr 5, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/716
Abstract
A capacitor and a DRAM device, the capacitor including a lower electrode; a dielectric layer structure on the lower electrode, the dielectric layer structure including a first zirconium oxide layer, a hafnium oxide layer, and a second zirconium oxide layer sequentially stacked; and an upper electrode on the dielectric layer structure, wherein the hafnium oxide layer has a tetragonal crystal phase or an orthorhombic crystal phase.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.