Fabrication of films having controlled stoichiometry using molecular beam epitaxy
US11680337B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 1, 2021 |
| Grant date | Jun 20, 2023 |
| Priority date | — |
| Expiry date | Apr 1, 2041 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG06T2207/30108
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of forming a film comprises growing, using a deposition system, at least a portion of the film and analyzing, using a RHEED instrument, the at least a portion of the film. Using a computer, data is acquired from the RHEED instrument that is indicative of a stoichiometry of the at least a portion of the film. Using the computer, adjustments to one or more process parameters of the deposition system are calculated to control stoichiometry of the film during subsequent deposition. Using the computer, instructions are transmitted to the deposition system to execute the adjustments of the one or more process parameters. Using the deposition system, the one or more process parameters are adjusted.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.