John E. Berg
23Patents
8h-index
20Co-inventors
75Inventor score
Filing activity: Jun 22, 1987 → Dec 21, 2023
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5978127A | Light phase grating device | Physics | 79 | Expired |
| US6165846A | Method of eliminating gate leakage in nitrogen annealed oxides | Electricity | 71 | Expired |
| US6190973A | Method of fabricating a high quality thin oxide | Electricity | 67 | Expired |
| US4824803A | Multilayer metallization method for integrated circuits | Electricity | 37 | Expired |
| US11493714B1 | Quantum computing die assembly with thru-silicon vias and connected logic circuit | Electricity | 26 | Active |
| US4895520A | Method of fabricating a submicron silicon gate MOSFETg21 which has a self-aligned threshold implant | Emerging Cross-Sectional Technologies | 21 | Expired |
| US7274064B2 | Non-volatile electromechanical field effect devices and circuits using same and methods of forming same | Emerging Cross-Sectional Technologies | 19 | Expired |
| US8913402B1 | Triple-damascene interposer | Electricity | 9 | Active |
| US6156653A | Method of fabricating a MOS device | Electricity | 6 | Expired |
| US6436195B1 | Method of fabricating a MOS device | Electricity | 6 | Expired |
| US6476635B1 | Programmable number of metal lines and effective metal width along critical paths in a programmable logic device | Electricity | 5 | Expired |
| US11493713B1 | Photonic quantum computer assembly having dies with specific contact configuration and matched CTE | Electricity | 4 | Active |
| US5631180A | Method of fabricating high threshold metal oxide silicon read-only-memory transistors | Emerging Cross-Sectional Technologies | 3 | Expired |
| US7943464B2 | Non-volatile electromechanical field effect devices and circuits using same and methods of forming same | Emerging Cross-Sectional Technologies | 3 | Active |
| US5389565A | Method of fabricating high threshold metal oxide silicon read-only-memory transistors | Emerging Cross-Sectional Technologies | 3 | Expired |
| US5353720A | Refuse incinerator | Emerging Cross-Sectional Technologies | 3 | Expired |
| US11550108B1 | Quantum computing die assembly with thru-silicon vias | Electricity | 2 | Active |
| US11892693B1 | Photonic quantum computer assembly | Electricity | 1 | Active |
| US5498896A | High threshold metal oxide silicon read-only-memory transistors | Emerging Cross-Sectional Technologies | 1 | Expired |
| US11680337B2 | Fabrication of films having controlled stoichiometry using molecular beam epitaxy | Physics | 1 | Active |
| US7595527B2 | Non-volatile electromechanical field effect devices and circuits using same and methods of forming same | Emerging Cross-Sectional Technologies | 1 | Active |
| US12242123B1 | Photonic quantum computer assembly with a quantum computing die facing an electronic circuit die | Electricity | 0 | Active |
| US12037700B2 | Fabrication of films having controlled stoichiometry using molecular beam epitaxy | Physics | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.