Interconnect structure having nanocrystalline graphene cap layer and electronic device including the interconnect structure
US11682622B2 · kind B2 · utility
3Cited by
11References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 2, 2021 |
| Grant date | Jun 20, 2023 |
| Priority date | — |
| Expiry date | Jun 26, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L23/53266
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided are an interconnect structure and an electronic device including the interconnect structure. The interconnect structure includes a dielectric layer including at least one trench, a conductive wiring filling an inside of the at least one trench, and a cap layer on at least one surface of the conductive wiring. The cap layer includes nanocrystalline graphene. The nanocrystalline includes nano-sized crystals.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.