Structure of high-voltage transistor and method for fabricating the same
US11682728B2 · kind B2 · utility
0Cited by
2References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 16, 2020 |
| Grant date | Jun 20, 2023 |
| Priority date | — |
| Expiry date | Aug 14, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/822
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The disclosure discloses a structure of high-voltage (HV) transistor which includes a substrate. An epitaxial doped structure with a first conductive type is formed in the substrate, wherein a top portion of the epitaxial doped structure includes a top undoped epitaxial layer. A gate structure is disposed on the substrate and at least overlapping with the top undoped epitaxial layer. A source/drain (S/D) region with a second conductive type is formed in the epitaxial doped structure at a side of the gate structure. The first conductive type is different from the second conductive type.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.