Fin smoothing and integrated circuit structures resulting therefrom

US11682731B2 · kind B2 · utility

Assignee

• Intel Corporation · US

Inventors

• Cory Bomberger · Portland, US
• Anand S. Murthy · Beaverton, US
• Tahir Ghani · Portland, US
• Anupama Bowonder · Portland, US

Key dates

• Filing date: Dec 2, 2019
• Grant date: Jun 20, 2023
• Expiry date: Oct 17, 2041

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/017

Abstract

Fin smoothing, and integrated circuit structures resulting therefrom, are described. For example, an integrated circuit structure includes a semiconductor fin having a protruding fin portion above an isolation structure, the protruding fin portion having substantially vertical sidewalls. The semiconductor fin further includes a sub-fin portion within an opening in the isolation structure, the sub-fin portion having a different semiconductor material than the protruding fin portion. The sub-fin portion has a width greater than or less than a width of the protruding portion where the sub-fin portion meets the protruding portion. A gate stack is over and conformal with the protruding fin portion of the semiconductor fin. A first source or drain region at a first side of the gate stack, and a second source or drain region at a second side of the gate stack opposite the first side of the gate stack.