Patent · US Active

Method of cleaning reaction tube, method of manufacturing semiconductor device, and substrate processing apparatus

US11685993B2 · kind B2 · utility

0Cited by
1References
9Claims
0Family size

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Key dates

Filing dateJan 22, 2021
Grant dateJun 27, 2023
Priority date
Expiry dateJan 22, 2041

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L21/67028
  • WIPO fieldChemical engineering
  • WIPO sectorChemistry

Abstract

There is provided a technique that includes a first annealing step of annealing the reaction tube; a first cleaning step of cleaning an inner surface of the reaction tube, after the first annealing step, with a liquid including a fluorine compound having a first concentration; a first rinsing step of washing away the fluorine compound used in the first cleaning step with pure water; a second annealing step of annealing the reaction tube; a second cleaning step of cleaning the inner surface of the reaction tube, after the second annealing step, with a liquid including a fluorine compound having a second concentration higher than the first concentration; and a second rinsing step of washing away the fluorine compound used in the second cleaning step with pure water.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.