Valley spin hall effect based non-volatile memory
US11688445B2 · kind B2 · utility
1Cited by
15References
19Claims
0Family size
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Key dates
| Filing date | Jan 30, 2022 |
| Grant date | Jun 27, 2023 |
| Priority date | — |
| Expiry date | Jan 30, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N52/80
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A memory cell is disclosed which includes a semiconductor layer, a first electrode coupled to the semiconductor layer, a second electrode coupled to the semiconductor layer, wherein the first and second electrodes are separated from one another along a first axis and wherein the semiconductor layer extends beyond the first axis along a second axis substantially perpendicular to the first axis, thereby forming a first wing, a third electrode separated from the semiconductor layer by an insulating layer, a first magnetic tunnel junction (MTJ) disposed on the first wing, and a first read electrode coupled to the first MTJ.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.