Yi-Tse Hung
12Patents
1h-index
12Co-inventors
43Inventor score
Filing activity: May 29, 2020 → Jul 4, 2024
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US11250896B2 | Valley spin hall effect based non-volatile memory | Electricity | 2 | Active |
| US11688445B2 | Valley spin hall effect based non-volatile memory | Electricity | 1 | Active |
| US11929115B2 | Memory device with SRAM cells assisted by non-volatile memory cells and operation method thereof | Physics | 1 | Active |
| US11244866B2 | Low dimensional material device and method | Electricity | 1 | Active |
| US11948941B2 | Semiconductor device, integrated circuit and methods of manufacturing the same | Electricity | 0 | Active |
| US12170323B2 | Nano transistors with source/drain having side contacts to 2-D material | Electricity | 0 | Active |
| US11955527B2 | Nano transistors with source/drain having side contacts to 2-D material | Electricity | 0 | Active |
| US12396229B2 | Semiconductor device | Electricity | 0 | Active |
| US12062696B2 | Manufacturing method of semiconductor device | Electricity | 0 | Active |
| US11749718B2 | Semiconductor device and manufacturing method thereof | Electricity | 0 | Active |
| US12211931B2 | Fin field-effect transistor device with low-dimensional material and method | Electricity | 0 | Active |
| US11476356B2 | Fin field-effect transistor device with low-dimensional material and method | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.