Fin isolation structure for FinFET and method of forming the same
US11688644B2 · kind B2 · utility
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12References
20Claims
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Key dates
| Filing date | Apr 30, 2021 |
| Grant date | Jun 27, 2023 |
| Priority date | — |
| Expiry date | May 27, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31053
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device structure is provided. The semiconductor device structure includes a substrate having adjacent first and second fins protruding from the substrate. A first gate structure and a second gate structure are across the first and second fins, respectively. An insulating structure is formed between the first gate structure and the second gate structure and includes a first insulating layer separating the first fin from the second fin, a capping structure formed in the first insulating layer, and a second insulating layer covered by the first insulating layer and the capping structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.