Semiconductor devices with shielding structures
US11688695B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 7, 2020 |
| Grant date | Jun 27, 2023 |
| Priority date | — |
| Expiry date | Jun 16, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B43/50
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Aspects of the disclosure provide a semiconductor device. The semiconductor device includes a first die. The first die includes a semiconductor substrate with transistors formed on a first side of the semiconductor substrate. Further, the first die includes a connection structure extending through the semiconductor substrate and conductively connecting a first conductive layer disposed on the first side of the semiconductor substrate with a second conductive layer disposed on a second side of the semiconductor substrate that is opposite to the first side of the semiconductor substrate. Further, the first die includes a shielding structure disposed in the semiconductor substrate and between the connection structure and at least a transistor. The shielding structure includes a third conductive layer and can alleviate coupling between the connection structure and the transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.