Methods of fabricating semiconductor devices having conductive pad structures with multi-barrier films
US11688703B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 13, 2022 |
| Grant date | Jun 27, 2023 |
| Priority date | — |
| Expiry date | Apr 13, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/00015
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods of fabricating semiconductor devices are provided. The method includes forming an interconnect structure over a substrate. The method also includes forming a passivation layer over the interconnect structure. The method further includes forming an opening in the passivation layer to expose a portion of the interconnect structure. In addition, the method includes sequentially forming a lower barrier film, an upper barrier film, and an aluminum-containing layer in the opening. The lower barrier film and the upper barrier film are made of metal nitride, and the upper barrier film has a nitrogen atomic percentage that is higher than a nitrogen atomic percentage of the lower barrier film and has an amorphous structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.