Semiconductor device structure and method for forming the same
US11688767B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 25, 2021 |
| Grant date | Jun 27, 2023 |
| Priority date | — |
| Expiry date | Mar 28, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/254
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device structure includes first nanostructures formed over a substrate. The structure also includes a first gate structure wrapped around the first nanostructures. The structure also includes first source/drain epitaxial structures formed over opposite sides of the first nanostructures. The structure also includes second nanostructures formed over the first nanostructure. The structure also includes a second gate structure wrapped around the second nanostructures. The structure also includes second source/drain epitaxial structures formed over opposite sides of the second nanostructures. The first gate structure and the second gate structure have different conductivity types, and the Ge concentration of the first nanostructures and the Ge concentration of the second nanostructures are different.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.