Semiconductor device with cap element
US11688769B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 26, 2020 |
| Grant date | Jun 27, 2023 |
| Priority date | — |
| Expiry date | May 25, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/017
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device structure is provided. The semiconductor device structure includes a gate stack over a semiconductor substrate and a source/drain structure adjacent to the gate stack. The semiconductor device structure also includes a cap element over the source/drain structure. The cap element has a first top plane, and the source/drain structure has a second top plane. The first top plane of the cap element is wider than the second top plane of the source/drain structure. A surface orientation of the first top plane of the cap element and a surface orientation of a side surface of the cap element are different from each other. The surface orientation of the first top plane of the cap element is {311}.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.