Magnetic memory structure and device
US11690298B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Nov 3, 2021 |
| Grant date | Jun 27, 2023 |
| Priority date | — |
| Expiry date | Nov 3, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/85
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Magnetic memory structure and memory device are provided. A magnetic memory structure includes a metal layer, a first magnetic tunnel junction, and a second magnetic tunnel junction. The metal layer includes a first contact region and a second contact region. Electrical resistivity of at least a first part of the first contact region is different than electrical resistivity of the second contact region. The first magnetic tunnel junction is disposed on the metal layer. The first magnetic tunnel junction includes a first free layer in contact with the first contact region of the metal layer. The second magnetic tunnel junction is disposed on the metal layer. The second magnetic tunnel junction includes a second free layer in contact with the second contact region of the metal layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.