Active matrix substrate and method for manufacturing same
US11695016B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 1, 2021 |
| Grant date | Jul 4, 2023 |
| Priority date | — |
| Expiry date | Sep 15, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/471
Abstract
An active matrix substrate includes a first TFT and a second TFT, each of TFTs includes an oxide semiconductor layer and a gate electrode arranged on the oxide semiconductor layer with a gate insulating layer therebetween, in which in the first TFT, in the oxide semiconductor layer, in at least a part of a first region covered with the gate electrode with the gate insulating layer interposed therebetween, a layered structure including a high mobility oxide semiconductor film having a relatively high mobility and a low mobility oxide semiconductor film placed on the high mobility oxide semiconductor film and having a lower mobility than the high mobility oxide semiconductor film is provided, and in the second TFT, in a first region of the oxide semiconductor layer, throughout, of the high mobility oxide semiconductor film and the low mobility oxide semiconductor film, one oxide semiconductor film is provided, and the other oxide semiconductor film is not provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.