Circuit and method for controlling charge injection in radio frequency switches
US11695407B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 6, 2021 |
| Grant date | Jul 4, 2023 |
| Priority date | — |
| Expiry date | Dec 6, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K2217/0009
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A circuit and method for controlling charge injection in a circuit are disclosed. In one embodiment, the circuit and method are employed in a semiconductor-on-insulator (SOI) Radio Frequency (RF) switch. In one embodiment, an SOI RF switch comprises a plurality of switching transistors coupled in series, referred to as “stacked” transistors, and implemented as a monolithic integrated circuit on an SOI substrate. Charge injection control elements are coupled to receive injected charge from resistively-isolated nodes located between the switching transistors, and to convey the injected charge to at least one node that is not resistively-isolated. In one embodiment, the charge injection control elements comprise resistors. In another embodiment, the charge injection control elements comprise transistors. A method for controlling charge injection in a switch circuit is disclosed whereby injected charge is generated at resistively-isolated nodes between series coupled switching transistors, and the injected charge is conveyed to at least one node of the switch circuit that is not resistively-isolated.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.