Christopher N. Brindle
64Patents
23h-index
23Co-inventors
88Inventor score
Filing activity: Sep 28, 2001 → Jun 29, 2023
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7910993B2 | Method and apparatus for use in improving linearity of MOSFET's using an accumulated charge sink | Electricity | 239 | Active |
| US7890891B2 | Method and apparatus improving gate oxide reliability by controlling accumulated charge | Electricity | 127 | Active |
| US8129787B2 | Method and apparatus for use in improving linearity of MOSFETs using an accumulated charge sink | Electricity | 92 | Active |
| US6803680B2 | Apparatus, methods, and articles of manufacture for a switch having sharpened control voltage | Electricity | 86 | Expired |
| US8638159B2 | Devices and methods for improving voltage handling and/or bi-directionality of stacks of elements when connected between terminals | Electricity | 76 | Active |
| US7515882B2 | Apparatus, methods and articles of manufacture for a multi-band switch | Electricity | 67 | Active |
| US8742502B2 | Method and apparatus for use in improving linearity of MOSFETs using an accumulated charge sink-harmonic wrinkle reduction | Electricity | 52 | Active |
| US8405147B2 | Method and apparatus for use in improving linearity of MOSFETs using an accumulated charge sink | Electricity | 47 | Active |
| US9087899B2 | Method and apparatus for use in improving linearity of MOSFETs using an accumulated charge sink-harmonic wrinkle reduction | Electricity | 41 | Active |
| US8954902B2 | Method and apparatus improving gate oxide reliability by controlling accumulated charge | Electricity | 40 | Active |
| US8669804B2 | Devices and methods for improving voltage handling and/or bi-directionality of stacks of elements when connected between terminals | Electricity | 39 | Active |
| US9397656B2 | Circuit and method for controlling charge injection in radio frequency switches | Electricity | 34 | Active |
| US9130564B2 | Method and apparatus for use in improving linearity of MOSFETs using an accumulated charge sink | Electricity | 32 | Active |
| US9780775B2 | Method and apparatus for use in improving linearity of MOSFETs using an accumulated charge sink | Electricity | 31 | Active |
| US9608619B2 | Method and apparatus improving gate oxide reliability by controlling accumulated charge | Electricity | 29 | Active |
| US9887695B2 | Circuit and method for controlling charge injection in radio frequency switches | Electricity | 29 | Active |
| US6730953B2 | Apparatus, methods and articles of manufacture for a low control voltage switch | Electricity | 29 | Expired |
| US8604864B2 | Devices and methods for improving voltage handling and/or bi-directionality of stacks of elements when connected between terminals | Electricity | 27 | Active |
| US9755615B2 | Devices and methods for improving voltage handling and/or bi-directionality of stacks of elements when connected between terminals | Electricity | 27 | Active |
| US9786781B2 | Method and apparatus for use in improving linearity of MOSFETs using an accumulated charge sink-harmonic wrinkle reduction | Electricity | 27 | Active |
| US9653601B2 | Method and apparatus for use in improving linearity of MOSFETs using an accumulated charge sink-harmonic wrinkle reduction | Electricity | 27 | Active |
| US9106227B2 | Devices and methods for improving voltage handling and/or bi-directionality of stacks of elements when connected between terminals | Electricity | 26 | Active |
| US10153763B2 | Method and apparatus for use in improving linearity of MOSFETs using an accumulated charge sink | Electricity | 25 | Active |
| US10074746B2 | Method and apparatus for use in improving linearity of MOSFETs using an accumulated charge sink—harmonic wrinkle reduction | Electricity | 23 | Active |
| US10680600B2 | Method and apparatus for use in improving linearity of MOSFETs using an accumulated charge sink | Electricity | 20 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.