Patent · US Active

Schottky thermal field emitter with integrated beam splitter

US11699564B2 · kind B2 · utility

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2References
20Claims
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Key dates

Filing dateOct 23, 2020
Grant dateJul 11, 2023
Priority date
Expiry dateJan 14, 2042

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01J2237/083
  • WIPO fieldElectrical machinery, apparatus, energy
  • WIPO sectorElectrical engineering

Abstract

A Schottky thermal field emitter (TFE) source integrated with a beam splitter by a standoff, which supports the beam splitter above the Schottky TFE extractor faceplate by a distance of 0.05 mm to 2 mm. The beam splitter includes a microhole array integrated with the standoff and being disposed opposite the extractor faceplate, the microhole array having a plurality of microholes that split the electron beam generated by the Schottky TFE into a plurality of beamlets. The support and extractor may be fabricated from the same material or from different materials. The support may be formed from a high temperature resistive material, which causes a potential difference between the extractor and the microhole array. This potential difference creates positively charged electrostatic lenses at the microholes, which increases current in the individual beamlets. Voltage on the microarray plate may be varied to achieve a high beamlet current.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.